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W4NXE4C-LD00 Datasheet PDF
| Производјач | Паковање | Опис | Температура | |
|---|---|---|---|---|
| Cree | Diameter 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
W4NXE4C-LD00 PDF | Мин°C | Макс°C |
- Cree W4NXE4C-0D00
Diameter 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition - Cree W4NXE4C-LD00
Diameter 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition - Cree W4NXE4C-SD00
Diameter 76.2mm; select micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition