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K4E160412D Datasheet PDF
| Производјач | Паковање | Опис | Температура | |
|---|---|---|---|---|
| Samsung semiconductor | 4Bit CMOS Dynamic with Extended Data |
K4E160412D PDF | Мин°C | Макс°C |
- Samsung semiconductor K4E160411D
4Bit CMOS Dynamic with Extended Data - Samsung K4E160411D-B
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. - Samsung K4E160411D-F
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. - Samsung semiconductor K4E160412D
4Bit CMOS Dynamic with Extended Data - Samsung K4E160412D-B
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. - Samsung K4E160412D-F
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.